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cha6358 - 99f ref. : dscha63583058 - 27 feb 13 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 27 - 31.5ghz high power amplifier gaas monolithic microwave ic description the cha6358 - 99f is a three stage s monolithic hpa that typically provides an output power of 31 d bm at 1 db gain compression associated to a high ip3 output of 38.5 dbm. it is designed for a wide range of applications, from professional to commercial communication systems the circuit is manufa ctured with a phemt process, 0.1 5m ga te length . it is available in chip form . main features main electrical characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range 27.0 31.5 ghz gain linear gain 22 db oip3 output third order interception point 38.5 db m pout output power @1db comp. 31 dbm vg1a vd1a vg2a vd2a vg3a vd3a vg1b vd1b vg2b vd2b vg3b vd3b rf out rf in 0 10 20 30 40 50 26 28 30 32 34 36 27 28 29 30 31 32 pae (%) output power (dbm) frequency (ghz) p - 1db psat pae at 1db
cha6358 - 99f 27 - 31.5ghz high power amplifier ref. : dscha63583058 - 27 feb 13 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c , vd = +6.0 v symbol parameter min typ max unit fop operating frequency range 27 31.5 ghz g small signal gain 2 2 db g
27 - 31.5ghz hi gh power amplifier cha6358 - 99f ref. : dscha63583058 - 27 feb 13 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vd drain bias voltage 6. 5v v id drain bias current 1 a vg gate bias voltage - 2 to +0.4 v pin maximum peak input power overdrive (2) +15 dbm tj junction temperature 175 c ta operating temperature range - 40 to +85 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. typical bias conditions tamb.= + 25c symbol pad n o parameter values unit vd 3, 5, 7, 9,11,13 dc drain voltage 6 v vg 2, 4, 6, 10,12,14 dc gate voltage (1) - 0.7 v (1) to be adjusted in order to achieve id: 750m a
cha6358 - 99f 27 - 31.5ghz high power amplifier ref. : dscha63583058 - 27 feb 13 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.= +25c, vd = +6.0v, id = 750ma freq (ghz) s11 (db) phs11 () s 21 (db) phs 21 () s 12 (db) phs 12 () s22 (db) phs22 () 1.0 - 0.551 158.5 - 93.379 40.7 - 86.551 - 113.2 - 0.111 172.1 2.0 - 2.421 134.6 - 80.802 36.0 - 86.900 - 144.4 - 0.162 164.2 3.0 - 6.244 50.0 - 95.935 177.7 - 88.285 109.0 - 0.225 155.8 4.0 - 5.974 - 111.6 - 87.556 47.8 - 87.589 - 66.7 - 0.324 146.0 5.0 - 3.426 - 152.9 - 66.555 100.3 - 92.067 - 61.2 - 0.546 133.3 6.0 - 2.867 - 170.4 - 52.616 75.1 - 102.38 - 144.5 - 1.250 114.0 7.0 - 2.828 178.8 - 40.621 23.8 - 91.666 2.1 - 4.534 78.4 8.0 - 3.021 171.3 - 33.067 - 52.5 - 72.837 - 56.7 - 20.496 - 78.2 9.0 - 3.327 166.3 - 31.038 - 118.3 - 69.331 - 95.6 - 5.781 - 168.9 10.0 - 3.589 163.4 - 31.395 - 163.1 - 62.180 - 125.4 - 3.241 166.1 11.0 - 3.635 162.0 - 32.037 178.0 - 59.603 - 163.8 - 2.554 150.2 12.0 - 3.368 160.6 - 28.808 178.5 - 59.104 172.9 - 2.487 138.1 13.0 - 2.893 157.9 - 21.731 162.5 - 59.194 155.3 - 2.776 128.3 14.0 - 2.393 153.4 - 14.255 123.8 - 56.373 137.4 - 3.230 122.2 15.0 - 1.991 147.7 - 8.702 66.2 - 55.750 115.9 - 2.989 118.4 16.0 - 1.682 141.4 - 6.401 7.2 - 56.274 102.9 - 2.480 109.1 17.0 - 1.442 134.5 - 5.552 - 39.1 - 57.430 96.8 - 2.621 98.0 18.0 - 1.264 127.2 - 4.341 - 76.3 - 54.554 88.8 - 2.979 88.5 19.0 - 1.149 119.2 - 2.418 - 111.8 - 54.508 73.7 - 3.261 79.6 20.0 - 1.061 110.9 - 0.318 - 147.2 - 55.451 65.1 - 3.435 70.0 21.0 - 0.918 101.7 2.131 178.1 - 51.757 56.1 - 3.561 59.1 22.0 - 0.803 90.7 5.002 143.2 - 51.993 28.0 - 3.748 46.3 23.0 - 0.658 78.0 8.590 106.8 - 52.168 10.5 - 4.052 31.5 24.0 - 0.451 61.5 12.909 65.5 - 54.026 - 22.3 - 4.595 14.1 25.0 - 0.388 37.6 17.935 14.9 - 56.156 - 52.4 - 5.716 - 6.8 26.0 - 1.662 0.7 22.522 - 52.5 - 66.692 - 122.4 - 8.214 - 28.5 27.0 - 6.795 - 39.2 24.359 - 129.3 - 56.327 50.9 - 11.960 - 42.7 28.0 - 14.855 - 60.3 24.154 160.6 - 52.705 - 4.2 - 17.273 - 46.0 29.0 - 25.338 - 66.4 23.474 97.1 - 50.758 - 62.8 - 18.844 7.9 30.0 - 26.446 - 4.4 22.423 38.1 - 50.015 - 118.0 - 11.658 4.0 31.0 - 21.698 - 80.9 22.228 - 17.1 - 50.967 - 173.5 - 9.521 - 23.2 32.0 - 20.535 - 144.6 21.813 - 82.9 - 47.172 114.4 - 8.751 - 45.9 33.0 - 14.861 - 154.9 20.492 - 145.5 - 46.708 41.9 - 6.933 - 63.9 34.0 - 8.473 155.7 18.753 143.5 - 52.160 - 40.9 - 5.818 - 99.1 35.0 - 7.509 105.6 14.728 76.2 - 56.905 - 61.2 - 5.726 - 130.4 36.0 - 8.251 64.3 10.002 19.2 - 63.017 - 116.2 - 5.949 - 161.3 37.0 - 9.279 25.2 5.374 - 30.8 - 62.276 - 88.4 - 5.786 167.6 38.0 - 9.981 - 15.4 1.158 - 77.1 - 58.178 - 159.0 - 5.520 138.3 39.0 - 9.806 - 55.2 - 2.819 - 123.3 - 64.498 99.0 - 4.647 110.3 40.0 - 8.620 - 91.1 - 7.022 - 168.7 - 63.483 - 43.2 - 3.614 82.0 41.0 - 7.246 - 120.3 - 11.373 146.9 - 55.962 - 162.4 - 2.604 55.0 42.0 - 5.933 - 145.4 - 16.083 103.7 - 56.607 166.0 - 1.859 29.8 43.0 - 4.769 - 167.5 - 20.978 64.5 - 55.999 144.9 - 1.434 6.3 44.0 - 3.968 172.7 - 26.079 30.1 - 55.080 133.1 - 1.322 - 14.6 45.0 - 3.215 156.1 - 31.492 - 1.9 - 51.391 144.6 - 1.471 - 32.5
27 - 31.5ghz hi gh power amplifier cha6358 - 99f ref. : dscha63583058 - 27 feb 13 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= +25c, vd = + 6 .0v, id = 750ma these values are representative of on test fixture measurements with a bonding wire of typically 0.2nh at the rf ports. linear gain & return losses versus frequency linear gain versus frequency & idq 1 - - 30 - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 30 25 27 29 31 33 35 gain & return loss (db) frequency (ghz) s11 s21 s22 14 16 18 20 22 24 26 28 30 32 34 24 25 26 27 28 29 30 31 32 33 34 35 36 gain (db) frequency (ghz) 750ma 850ma
cha6358 - 99f 27 - 31.5ghz high power amplifier ref. : dscha63583058 - 27 feb 13 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb .= +25c, vd = +6 .0v, id = 750ma linear gain versus frequency &temperature output power & pae versus frequency 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 24 25 26 27 28 29 30 31 32 33 34 35 36 gain (db) frequency (ghz) 85 c 25 c - 40 c 0% 5% 10% 15% 20% 25% 30% 35% 40% 45% 50% 26 27 28 29 30 31 32 33 34 35 36 27 28 29 30 31 32 pae output power (dbm) frequency (ghz) p - 1db psat pae at 1db
27 - 31.5ghz hi gh power amplifier cha6358 - 99f ref. : dscha63583058 - 27 feb 13 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= +25c, vd = +6 .0v, id = 750ma drain current versus input power & id q uiescent output ip3 versus pout dcl & frequency 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 - 10 - 5 0 5 10 15 drain current (a) input power (dbm) idq= 750ma idq= 850ma 34 35 36 37 38 39 40 41 42 43 44 12 14 16 18 20 22 24 26 28 30 32 oip3 (dbm) output power dcl (dbm) 27ghz 28ghz 29ghz 30ghz 31ghz 32ghz
cha6358 - 99f 27 - 31.5ghz high power amplifier ref. : dscha63583058 - 27 feb 13 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= +25c, vd = +6 .0v, id = 750ma output ip3 versus pout dcl & temperature freq = 27ghz imd3 versus pout dcl & frequency 34 35 36 37 38 39 40 41 42 43 44 12 14 16 18 20 22 24 26 28 30 32 oip3 (dbm) output power dcl (dbm) 25 c +85 c - 40 c 20 25 30 35 40 45 50 55 60 12 14 16 18 20 22 24 26 28 30 32 imd3 (dbc) output power dcl (dbm) 27ghz 28ghz 29ghz 30ghz 31ghz 32ghz
27 - 31.5ghz hi gh power amplifier cha6358 - 99f ref. : dscha63583058 - 27 feb 13 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 100m. chip size : 2500x2500 35m all dimensions are in micrometers pin number pin name description 1 in rf in 2,14 vg1a, vg1b gate stage1 3,13 vd1a, vd1b drain stage1 4,12 vg2a, vg2b gate stage2 5, 11 vd2a, vd2b drain stage2 6, 10 vg3a, vd3b (1) gate stage3 7, 9 vd3a, vg3b (2) drain stage3 8 out rf out (1) vd3b is the label on the die pad, corresponding to gate access on the 3 rd stage (2) vg3b is the label on the die pad, corresponding to drain access on the 3 rd stage 1 2 3 4 5 6 7 8 14 13 12 11 10 9
cha6358 - 99f 27 - 31.5ghz high power amplifier ref. : dscha63583058 - 27 feb 13 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan - for best thermal and electrical performances, chip should be brazed on a metal base plate. - 2 wedge bonding , 25m diameter , is preferred , with a maximum length of 300m for rf in and out . recommended circuit bonding table label type decoupling comment in , out rf not required maximum 3 00m length with a wire diameter of 25 m vdxy vd 120pf , 10n f , 1f drain supply v gxy vg 120pf , 10n f , 1f gate supply to drain dc power supply to drain dc power supply to gate dc power supply to gate dc power supply in out in out 120pf 10nf 1f to drain dc power supply to gate dc power supply 2 3 4 5 6 7 14 13 12 11 10 9
27 - 31.5ghz hi gh power amplifier cha6358 - 99f ref. : dscha63583058 - 27 feb 13 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic 6v, 75 0ma d3 d3 g1 5 ? g2 g3 g1 d1 d2 15 ? 15 ? 110ma 40ma 225ma 225ma rf in rf out d1 d2 g3 g 2 5 ? 3.5 ? 3.5 ? 5 ? 5 ? 6.5 ? 6.5 ? 6.5 ? 6.5 ? 110ma 40ma
cha6358 - 99f 27 - 31.5ghz high power amplifier ref. : dscha63583058 - 27 feb 13 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.u ms - gaas.com . ordering information chip form : cha6358 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semicondu ctors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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